by396p thru by399p document number 88542 10-oct-05 vishay general semiconductor www.vishay.com 1 do-201ad soft recovery fast-switching plastic rectifier major ratings and characteristics i f(av) 3.0 a v rrm 100 v to 800 v i fsm 100 a t rr 500 ns i r 10 a v f 1.25 v t j max. 125 c features ? fast switching for high efficiency ? low forward voltage drop ? low leakage current ? high forward surge capability ? solder dip 260 c, 40 seconds typical applications for use in fast switching re ctification of power supply, inverters, converters and freewheeling diodes for consumer and telecommunication. (note: these devices are not q101 qualified. there- fore, the devices specified in this datasheet have not been designed for use in automotive or hi-rel appli- cations.) mechanical data case: do-201ad, molded epoxy body epoxy meets ul-94v-0 flammability rating terminals: matte tin plated (e3 suffix) leads, solder- able per j-std-002b and jesd22-b102d polarity: color band denotes cathode end maximum ratings (t a = 25 c unless otherwise noted) parameter symbols by396p by397p by398p by399p units maximum repetitive peak reverse voltage v rrm 100 200 400 800 v maximum rms voltage v rms 70 140 280 560 v maximum dc blocking voltage v dc 100 200 400 800 v maximum average forward rectified current 0.375" (9.5 mm) lead lengths at t a = 50 c i f(av) 3.0 a peak forward surge current 10 ms si ngle half sine-wave superimposed on rated load at t a = 50 c i fsm 100 a maximum repetitive peak forward surge at f < 15 khz i frm 10 a operating junction temperature range t j - 50 to + 125 c storage temperature range t stg - 50 to + 150 c
www.vishay.com 2 document number 88542 10-oct-05 by396p thru by399p vishay general semiconductor electrical characteristics (t a = 25 c unless otherwise noted) thermal characteristics (t a = 25 c unless otherwise noted) notes: (1) thermal resistance from junction to ambient at 0.375" (9.5mm) lead length with both leads to heat sink ratings and characteristics curves (t a = 25 c unless otherwise noted) parameter test condition symbols by396p by397p by398p by399p units maximum instantaneous forward voltage at 3.0 a v f 1.25 v maximum dc reverse current at rated dc blocking voltage t a = 25 c t a = 100 c i r 10 500 a maximum reverse recovery time at i f = 10 ma, i r = 10 ma, i rr = 1.0 ma t rr 500 ns maximum forward recovery time at 100 ma, di/dt = 50 a/s t fr 1.0 s typical junction capacitance at 4.0 v, 1 mhz c j 28 pf parameter symbols by396p by397p by398p by399p units typical thermal resistance (1) r ja 22 c/w figure 1. forward current derating curve am b ient temperat u re (c) a v erage for w ard rectified c u rrent (a) 0 20 40 60 8 0 100 120 140 0 3.0 4.0 2.0 1.0 resisti v e or ind u cti v e load 0.375? (9.5 mm) lead length figure 2. maximum non-repetitive peak forward surge current peak for w ard s u rge c u rrent (a) 1 10 100 10 100 200 t a = 50 c 10 ms single half sine- w a v e at rated load nu m b er of cycles at 50 hz
by396p thru by399p document number 88542 10-oct-05 vishay general semiconductor www.vishay.com 3 package outline dimensions in inches (millimeters) figure 3. typical instantaneous forward characteristics figure 4. typical reve rse characteristics instantaneo u sfor w ard v oltage ( v ) instantaneo u sfor w ard c u rrent (a) 0.4 0.6 1.0 1.2 1.4 1.6 1. 8 10 100 1 0.1 0.01 2.0 0. 8 t j = 25 c p u lse w idth = 300 s 1% d u ty cycle percent of rated peak re v erse v oltage (%) 0 20 40 60 100 0.1 10 1 0.01 8 0 instantaneo u s re v erse c u rrent ( a) t j = 100 c t j = 25 c t j = 50 c figure 5. typical junction capacitance re v erse v oltage ( v ) j u nction capacitance (pf) 1 100 10 100 10 t j = 25 c f = 1.0 mhz v sig = 50m v p-p 0.210 (5.3) 0.190 (4.8) dia. 0.052 (1.32) 0.048 (1.22) dia. 1.0 (25.4) min. 0.375 (9.5) 0.285 (7.2) 1.0 (25.4) min. do-201ad
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